-
1
-
-
17644429462
-
A 6 V embedded 90 nm silicon nanocrystal nonvolatile memory
-
Muralidhar, R.: et al. ' A 6 V embedded 90 nm silicon nanocrystal nonvolatile memory ', IEDM Dig., 2003, p. 601-604
-
(2003)
IEDM Dig.
, pp. 601-604
-
-
Muralidhar, R.1
-
2
-
-
33751335895
-
Nanocrystal physical attributes influencing non-volatile memory performance
-
Santa Barbara, CA, USA
-
Hradsky, B., Muralidhar, R., Rao, R.A., Steimle, B., Straub, S., White, B.E., Sadd, M., Anderson, S.G.H., Yater, J.A., Swift, C.T., Acred, B., Peschke, J., Prinz, E.J., and Chang, K.M.: ' Nanocrystal physical attributes influencing non-volatile memory performance ', Abst. IEEE Device Research Conf., Santa Barbara, CA, USA 2005, p. 37-38
-
(2005)
Abst. IEEE Device Research Conf.
, pp. 37-38
-
-
Hradsky, B.1
Muralidhar, R.2
Rao, R.A.3
Steimle, B.4
Straub, S.5
White, B.E.6
Sadd, M.7
Anderson, S.G.H.8
Yater, J.A.9
Swift, C.T.10
Acred, B.11
Peschke, J.12
Prinz, E.J.13
Chang, K.M.14
-
3
-
-
2942642178
-
Moore's law and the energy requirement of computing vs. performance
-
Kish, L.B.: ' Moore's law and the energy requirement of computing vs. performance ', IEE Proc., Circuits Devices Syst., 2004, 151, (2), p. 190-194
-
(2004)
IEE Proc., Circuits Devices Syst.
, vol.151
, Issue.2
, pp. 190-194
-
-
Kish, L.B.1
-
4
-
-
0034860020
-
Modeling and design study of nanocrystal memory devices
-
Notre Dame, IN, USA
-
She, M., King, Y.-C., King, T.-J., and Hu, C.: ' Modeling and design study of nanocrystal memory devices ', Abst. IEEE Device Research Conf., Notre Dame, IN, USA 2001, p. 139-140
-
(2001)
Abst. IEEE Device Research Conf.
, pp. 139-140
-
-
She, M.1
King, Y.-C.2
King, T.-J.3
Hu, C.4
-
5
-
-
0017995933
-
On low-frequency noise in tunneling diodes
-
Kleinpenning, T.G.M.: ' On low-frequency noise in tunneling diodes ', Solid-State Electron., 1978, 21, p. 927-931
-
(1978)
Solid-state Electron.
, vol.21
, pp. 927-931
-
-
Kleinpenning, T.G.M.1
-
6
-
-
0003788066
-
-
J. Wiley & Sons, New York
-
Johns, D.A., and Martin, K.: ' Analog integrated circuit design ', (J. Wiley & Sons, New York 1997), p. 180-220
-
(1997)
Analog Integrated Circuit Design
, pp. 180-220
-
-
Johns, D.A.1
Martin, K.2
-
7
-
-
84939730902
-
The mathematical analysis of random noise
-
Rice, S.O.: ' The mathematical analysis of random noise ', Bell Syst. Tech. J., 1944, 23, p. 282-332
-
(1944)
Bell Syst. Tech. J.
, vol.23
, pp. 282-332
-
-
Rice, S.O.1
-
8
-
-
84944485718
-
The mathematical analysis of random noise
-
Rice, S.O.: ' The mathematical analysis of random noise ', Bell Syst. Tech. J., 1945, 24, p. 46-156
-
(1945)
Bell Syst. Tech. J.
, vol.24
, pp. 46-156
-
-
Rice, S.O.1
-
9
-
-
0031996751
-
Cosmic ray soft error rates of 16-Mb DRAM memory chips
-
Ziegler, J., Nelson, M., Shell, J., Perterson, R., Gelderloos, C., Muhlfeld, H., and Montrose, C.: ' Cosmic ray soft error rates of 16-Mb DRAM memory chips ', IEEE J. Solid-State Circuits, 1998, 33, p. 246-252
-
(1998)
IEEE J. Solid-state Circuits
, vol.33
, pp. 246-252
-
-
Ziegler, J.1
Nelson, M.2
Shell, J.3
Perterson, R.4
Gelderloos, C.5
Muhlfeld, H.6
Montrose, C.7
|