Nanocrystal physical attributes influencing non-volatile memory performance

Device Research Conference - Conference Digest, DRC

Volumn 2005, Issue , 2005, Pages 37-38

  Hradsky, B ^a   Muralidhar, R ^a   Rao, R A ^a   Steimle, B ^a   Straub, S ^a   White Jr , B E ^a   Sadd, M ^a   Anderson, S G H ^a   Yater, J A ^a   Swift, C T ^a   Acred, B ^a   Peschke, J ^a   Prinz, E J ^a   Chang, K M ^a  

^a FREESCALE SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA REDUCTION; DATA STORAGE EQUIPMENT; NONVOLATILE STORAGE;

DATA RETENTION; NANOCRYSTAL MEMORY DEVICES; PROGRAM-ERASE CHARACTERISTICS;

NANOSTRUCTURED MATERIALS;

EID: 33751335895     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2005.1553044     Document Type: Conference Paper

References (5)

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4. R.A. Rao et al, Solid-State Electronics 48, 1463, (2004)
5. B. Eitan, et al, Intl. Conf. S.S.D.M., Tokyo, (1999)