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Volumn 42, Issue 1, 2006, Pages 29-30

C-band emission from GaInNAsSb VCSEL on GaAs

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; LASER BEAM EFFECTS; MOLECULAR BEAM EPITAXY; SILICA;

EID: 30344432092     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20063986     Document Type: Article
Times cited : (15)

References (10)
  • 1
    • 0035132379 scopus 로고    scopus 로고
    • Monolithic VCSEL with InGaAsN active region emitting at 1.28μm and CW output power exceeding 500μW at room temperature
    • Steinle, G., Riechert, H., and Egorov, A.Yu.: ' Monolithic VCSEL with InGaAsN active region emitting at 1.28μm and CW output power exceeding 500μW at room temperature ', Electron. Lett., 2001, 37, (2), p. 93-95
    • (2001) Electron. Lett. , vol.37 , Issue.2 , pp. 93-95
    • Steinle, G.1    Riechert, H.2    Egorov, A.Yu.3
  • 2
    • 0347133603 scopus 로고    scopus 로고
    • Improving optical properties of 1.55μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer
    • Liu, H.Y., Hopkinson, M., Navaretti, P., Gutierrez, M., Ng, J.S., and David, J.P.R.: ' Improving optical properties of 1.55μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer ', Appl. Phys. Lett., 2003, 83, (24), p. 4951-4953
    • (2003) Appl. Phys. Lett. , vol.83 , Issue.24 , pp. 4951-4953
    • Liu, H.Y.1    Hopkinson, M.2    Navaretti, P.3    Gutierrez, M.4    Ng, J.S.5    David, J.P.R.6
  • 5
    • 27344432180 scopus 로고    scopus 로고
    • Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy
    • Sun, H.D., Calvez, S., Dawson, M.D., Gupta, J.A., Sproule, G.I., Wu, X., and Wasilewski, Z.R.: ' Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy ', Appl. Phys. Lett., 2005, 87, p. 181908
    • (2005) Appl. Phys. Lett. , vol.87 , pp. 181908
    • Sun, H.D.1    Calvez, S.2    Dawson, M.D.3    Gupta, J.A.4    Sproule, G.I.5    Wu, X.6    Wasilewski, Z.R.7
  • 6
    • 18444402505 scopus 로고    scopus 로고
    • The opportunities, successes and challenges for GaInNAsSb
    • Harris, J.S.: ' The opportunities, successes and challenges for GaInNAsSb ', J. Cryst. Growth, 2005, 278, p. 3-17
    • (2005) J. Cryst. Growth , vol.278 , pp. 3-17
    • Harris, J.S.1
  • 8
    • 4544243320 scopus 로고    scopus 로고
    • Vertical-cavity surface-emitting laser active regions for enhanced performance with optical pumping
    • Geske, J., Gan, K.-G., Okuno, Y.L., Piprek, J., and Bowers, J.E.: ' Vertical-cavity surface-emitting laser active regions for enhanced performance with optical pumping ', IEEE J. Quantum. Electron., 2004, 40, (9), p. 1155-1162
    • (2004) IEEE J. Quantum. Electron. , vol.40 , Issue.9 , pp. 1155-1162
    • Geske, J.1    Gan, K.-G.2    Okuno, Y.L.3    Piprek, J.4    Bowers, J.E.5
  • 10
    • 0036908723 scopus 로고    scopus 로고
    • Low-loss 1.3-μm GaInNAs saturable Bragg reflector for high-power picosecond neodymium lasers
    • Sun, H.D., Valentine, G.J., Macaluso, R., Calvez, S., Burns, D., Dawson, M.D., Jouhti, T., and Pessa, M.: ' Low-loss 1.3-μm GaInNAs saturable Bragg reflector for high-power picosecond neodymium lasers ', Opt. Lett., 2002, 27, (23), p. 2124-2126
    • (2002) Opt. Lett. , vol.27 , Issue.23 , pp. 2124-2126
    • Sun, H.D.1    Valentine, G.J.2    Macaluso, R.3    Calvez, S.4    Burns, D.5    Dawson, M.D.6    Jouhti, T.7    Pessa, M.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.