Design of flat-band AlGaAs heterojunction bragg reflectors

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 40-46

  Yechuri, Sitaramarao S ^a   Shieh, Tsay Jiu Brian ^a   Johnson, Ralph H ^b  

^a University of Texas   (United States)

^b Honeywell Micro Switch   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRONS; HETEROJUNCTIONS; LIGHT ABSORPTION; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; MIRRORS; NUMERICAL METHODS; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS;

BRAGG REFLECTORS; COMPOUND SEMICONDUCTOR DEVICE ANALYSIS; CONDUCTION BAND VALLEY; ENERGY BAND GAP; FLAT BAND HETEROJUNCTION DESIGN; POISSON EQUATION; VALENCE BAND PEAK;

BRAGG CELLS;

EID: 0029732198     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477591     Document Type: Article

References (10)

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