2.3 - 2.7 μm room temperature CW-operation of InGaAsSb/AlGaAsSb broad-contact and single-mode ridge-waveguide SCH-QW diode lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3628, Issue , 1999, Pages 124-129

  Garbuzov, D ^a   Menna, R ^a   Maiorov, M ^a   Lee, H ^a   Khalfin, V ^a   DiMarco, L ^a   Capewell, D ^a   Martinelli, R ^a   Belenky, G ^a   Connolly, J ^a  

^a SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CURRENT DENSITY; ELECTRONS; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; SUBSTRATES; THERMAL EFFECTS; WAVEGUIDES;

AUGER RECOMBINATION; MID INFRARED DIODE LASERS; RIDGE LASERS; TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0032672367     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.344538     Document Type: Conference Paper

References (6)