Practical Approach for AAPSM Image Imbalance Correction for Sub-100nm Lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5130, Issue , 2003, Pages 778-786

  Cho, Hung Lin ^a   Lin, Shu Yi ^a   Hsieh, Frank ^a   Kroyan, Armen ^b   Liu, Hua Yu ^b   Huang, Jason ^b   Hsu, Shu Hao ^c   Huang, I H ^c   Lin, Benjamin Szu Min ^c   Hung, Kuei Chun ^c  

^a Toppan Chunghwa Electronics Co Ltd   (Taiwan)

^b SYNOPSYS INC   (United States)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Alternating aperture PSM; Image intensity imbalance; Mask topography effects

Indexed keywords

ALTERNATING-APERTURE PHASE SHIFT MASKS; IMAGE INTENSITY IMBALANCE; MASK TOPOGRAPHY;

COMPUTER SIMULATION; ELECTROMAGNETIC FIELDS; MASKS; OPTIMIZATION; PARAMETER ESTIMATION; PHASE SHIFT; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

LITHOGRAPHY;

EID: 1642474051     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504393     Document Type: Conference Paper

References (7)

1. A. Kroyan and H-Y Liu, "Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology," Proc. SPIE, Vol. 4889, 2002.
2. M. D. Levenson et al., "Improving Resolution in Photolithography with a Phase-Shifting Mask," IEEE Transactions on Electron Devices, Vol. ED-29, No. 12, pp. 1828-1836, 1982.
3. H-Y Liu et al., "The Application of Alternating Phase-Shifting Masks to 140nm Gate Patterning: Line Width Control Improvements and Design Optimization," SPIE Proc., Vol. 3236, 1997.
4. Y.Borodovsky et al., "Lithography strategy for 65nm node," Proc. SPIE, Vol. 4754, 2002.
5. Y. Morikawa et al., "100nm-Alt.PSM structure discussion for ArF lithography," Proc. SPIE, Vol. 4409, 2001.
6. A. Wong and A. Neureuther, "Mask topography effects in projection printing of phase shift masks," IEEE Trans. Electron. Devices, Vol. 41, p. 895, 1994.
7. A. Erdmann and C. Friedrich, "Rigorous diffraction analysis for future mask technology," Proc. SPIE, Vol. 4000, p. 684, 2000