Electronic structure and optical properties of (ZnSe)n/(Si 2)m (111) superlattices

Journal of Applied Physics

Volumn 99, Issue 4, 2006, Pages

  Laref, A ^a   Laref, S ^b   Belgoumene, B ^b   Bouhafs, B ^b   Tadjer, A ^b   Aourag, H ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b UNIVERSITY OF SIDI BEL ABBES   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS; SILICON; SUPERLATTICES; ZINC COMPOUNDS;

CONDUCTION BANDS; VALENCE-BAND EDGES; ZONE-FOLDING EFFECTS;

ELECTRONIC STRUCTURE;

EID: 33644598072     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2168240     Document Type: Article

References (37)

1. O. Ieda, K. Kitahara, N. Ohtsuka, A. Hobbs, and M. Ozeki, Mater. Res. Soc. Symp. Proc. 221, 393 (1991).
2. B. J. Wu, L. H. Kuo, J. M. Depuydt, G. M. Haugen, M. A. Haase, and L. Salamancariba, Appl. Phys. Lett. 68, 379 (1996).
3. J. R. Kim and K. S. Jones, Crit. Rev. Solid State Mater. Sci. 21, 1 (1996).
4. P. Rees, J. F. Helfernan, F. P. Logue, J. F. Donegan, C. Jordan, J. Hegarty, F. Hiei, and A. Ishibashi, IEE Proc.: Optoelectron. 143, 110 (1996).
5. T. K. Tran et al., J. Cryst. Growth 159, 1080 (1996).
6. R. C. Miller, D. A. Kleinman, and A. Savage, Phys. Rev. Lett. 11, 146 (1963).
7. F. W. Scholl and C. L. Tang, Phys. Rev. B 8, 4607 (1973).
8. A. J. Fisher et al., Phys. Rev. Lett. 73, 2368 (1994).
9. M. Ritze, R. Enderlein, D. Schikora, O. Goede, and W. Heimbrodlt, Superlattices Microstruct. 9, 351 (1986).
10. H. Rücker, M. Hanke, F. Bechstedt, and R. Enderlein, Superlattices Microstruct. 2, 477 (1986).
11. E. Wang, Appl. Surf. Sci. 201, 626 (1996).
12. Z. Y. Han, S. F. Yoon, K. Radhakrishnan, and D. H. Zhang, Superlattices Microstruct. 18, 83 (1995).
13. M. Akiyama, Y. Kawarada, and K. Kaminishi, J. Cryst. Growth 68, 21 (1984).
14. N. Chang, R. People, F. A. Baiochi, and K. W. Wecht, Appl. Phys. Lett. 49, 815 (1986)
15. T. Crumbaker, H. Y. Lee, M. J. Hafich, and G. Y. Robinson, Appl. Phys. Lett. 54, 140 (1989).
16. J. Shen, J. D. Dow, and S. Y. Ren, J. Appl. Phys. 67, 376 (1990).
17. D. Shen, K. Zhang, and R. Fu, Appl. Phys. Lett. 53, 500 (1988).
18. J. Polmann and S. T. Pantelides, Phys. Rev. B 21, 709 (1980).
19. R. Eppenga, Phys. Rev. B 40, 10402 (1989).
20. D. M. Bylander and L. Kleinman, Phys. Rev. B 41, 3509 (1990).
21. A. Munoz, N. Chetty, and R. M. Martin, Phys. Rev. B 41, 2976 (1990).
22. R. G. Dandrea, S. Froyen, and A. Zunger, Phys. Rev. B 42, 3213 (1990).
23. P. Vogl, H. P. Hjalmarson, and J. D. Dow, J. Phys. Chem. Solids 44, 365 (1983).
24. J. C. Slater and G. F. Koster, Phys. Rev. 94, 1498 (1954).
25. J. C. Phillips, Bonds and Bands in Semiconductors (Academic, New York, 1973).
26. W. A. Harrison, Electronic Structure and the Properties of Solids (Dover, New York, 1989).
27. R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, J. Appl. Phys. 81, 7845 (1997).
28. E. L. Ivchenko, A. Yu. Yaminski, and U. Rössler, Phys. Rev. B 54, 5852 (1996).
29. R. C. Iotti, L. C. Adreani, and M. Di Ventra, Phys. Rev. B 57, R15072 (1998).
30. D. Olguin and R. Baquero, Phys. Rev. B 51, 16891 (1995).
31. A. Laref, H. Aourag, B. Belgoumene, and A. Tadjer, J. Appl. Phys. 94, 5027 (2003).
32. C. Priester, G. Allan, and M. Lannoo, Phys. Rev. B 37, 8519 (1988).
33. Y. C. Chang and D. E. Aspnes, Phys. Rev. B 41, 12002 (1990).
34. M. L. Cohen and T. K. Bergstresser, Phys. Rev. 141, 789 (1966).
35. S. Y. Ren, J. D. Dow, and G. L. Yang, Phys. Rev. B 45, 6628 (1992).
36. D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).
37. J. L. Freeouf, Phys. Rev. B 7, 3810 (1973).