Tight-binding approach to excitons bound to monolayer impurity planes: Strong radiative properties of InAs in GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 24, 1998, Pages R15072-R15075

  Iotti, Rita Claudia ^a   Andreani, Lucio Claudio ^a   Di Ventra, Massimiliano ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000644655     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.R15072     Document Type: Article

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