High temperature gain measurements in optically pumped ZnCdSe-ZnSe quantum wells

IEE Proceedings: Optoelectronics

Volumn 143, Issue 1, 1996, Pages 110-112

  Rees, P ^a   Heffernan, J F ^a   Logue, F P ^a   Donegan, J F ^a   Jordan, C ^a   Hegarty, J ^a   Hiei, F ^b   Ishibashi, A ^b  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b SONY CORPORATION   (Japan)

Author keywords

Gain spectra; Multiple quantum wells

Indexed keywords

EMISSION SPECTROSCOPY; GAIN MEASUREMENT; LASER MODES; LASER PULSES; LIGHT EMISSION; OPTICAL PUMPING; Q SWITCHED LASERS; QUANTUM WELL LASERS; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

COULOMB ENHANCEMENT; GAIN SPECTRA; MULTIPLE QUANTUM WELLS; SPECTRAL BROADENING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030084318     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19960172     Document Type: Article

References (16)

1. ISHIBASHI, A.: 'II-VI blue-green laser diodes', IEEE J. Sel. Topics Quantum Electron., 1995, 1, pp. 741-748
2. DING, J., JEON, H., ISHIHARA, T., HAGEROTT, M., NURMIKKO, A.V., LUO, H., SAMARTH, N., and FURDYNA, J.: 'Excitonic gain and laser emission in ZnSe based quantum wells', Phys. Rev. Lett., 1992, 69, pp. 1707-1710
3. KAWAKAMI, Y., HAUKSSON, I., STEWART, H., SIMPSON, J., GALBRAITH, I., PRIOR, K.A., and CAVENETT, B.C.: 'Exciton-related lasing mechanism in ZnSe-ZnCdSe multiple quantum wells', Phys. Rev. B, 1993, 48, pp. 11994-12000
4. OKUYAMA, H., KATO, E., ITOH, S., NAKAYAMA, N., OUATA, T., and ISHIBASHI, A.: 'Operation and dynamics of ZnSe/ZnMgSSe double heterostructure blue laser diode at room temperature', Appl. Phys. Lett., 1995, 66, (6), pp. 656-658
5. CHOW, W.W., and KOCH, S.W.: 'Many-body Coulomb effects in room temperature II-VI quantum well semiconductor lasers', Appl. Phys. Lett., 1995, 66, pp. 3004-3006
6. REES, P., LOGUE, F.P.,DONEGAN, J.F.,HEFFERNAN, J.F., JORDAN, C., and HEGARTY, J.: 'Calculation of gain-current characteristics in ZnCdSe-ZnSe quantum well structures including many body effects', Appl. Phys. Lett., 1995, 66, pp. 780-782
7. SHAKLEE, K.L., NAHORY, R.E., and LEHENY, R.F.: 'Optical gain in semiconductors', J. Lumin., 1973, 7, pp. 284-309
8. MADELUNG, O., VON DER OSTEN, W., ROSSLER, U., LANDOLT, and BERNSTEIN: 'Numerical data and functional relationships in science and technology' Vol. 17b (Springer-Verlag, Berlin, 1987)
9. HAUG, H., and KOCH, S.W.: 'Quantum theory of the optical and electronic properties of semiconductors' (World Scientific, Singapore, 1990)
10. CHUANG, S.L.: 'Efficient band-structure calculations of strained quantum wells', Phys. Rev. B, 1991, 43, pp. 9649-9653
11. MENSZ, P.M.: 'Prospect for truly blue ZnSe/ZnMgSSe/ZnMgSSe semiconductor diode lasers', Appl. Phys. Lett., 1994, 65, pp. 2627-2629
12. KANE, E.: 'Thomas-Fermi approach to impure semiconductor band structure', Phys. Rev., 1963, 131, pp. 79-88
13. HAMILTON, R.A.H., and REES, P.: 'Line broadening due to carrier-carrier scattering in quantum well heterostructures', Semicond. Sci. Tech., 1993, 8, pp. 728-734
14. ASADA, M.: 'Intraband relaxation time in quantum-well lasers', IEEE J. Quantum Electron., 1989, 25, pp. 2019-2026
15. TSUI, E.S.-M., BLOOD, P., and FLETCHER, E.D.: 'Electroluminescent processes in quantum well structures', Semicond. Sci. Technol., 1992, 7, pp. 837-844
16. PELOUCH, W.S., ELLINGSON, R.J., POWERS, P.E., TANG, C.L., SZMYD, D.M., and NOZIK, A.J.: 'Comparison of hot-carrier relaxation in quantum wells and bulk GaAs at high carrier densities', Phys. Rev. B, 1992, 45, pp. 1450-1453