Intersubband transitions in dilute (In,Ga)(As,N)(Al,Ga)As multiple quantum wells analyzed within a three-band kp model

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 8, 2006, Pages

  Giehler, M ^a   Hey, R ^a   Kleinert, P ^a   Grahn, H T ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33644557169     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.085322     Document Type: Article

References (17)

1. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.1221 82, 1221 (1999).
2. E. P. O'Reilly and A. Lindsay, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/(SICI)1521-3951(199911)216:1<131::AID-PSSB131>3.3.CO;2-6 216, 131 (1999).
3. E. P. O'Reilly, A. Lindsay, S. Tomic, and M. Kamal-Saadi, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/17/8/316 17, 870 (2002).
4. See, e.g., Semicond. Sci. Technol. SSTEET 0268-1242 17 (8) 2002, topical issue, edited by, J. W. Ager III, and, W. Walukiewicz,, and references therein.
5. A. Guzmán, E. Luna, J. Miguel-Sánchez, E. Calleja, and E. Muñoz, Infrared Phys. Technol. IPTEEY 1350-4495 44, 377 (2003).
6. J.-Y. Duboz, J. A. Gupta, M. Byloss, G. C. Aers, H. C. Liu, and Z. R. Wasilewski, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1500434 81, 1836 (2002);
7. J.-Y. Duboz, J. A. Gupta, Z. R. Wasilewski, J. Ramsey, R. L. Williams, G. C. Aers, B. J. Riel, and G. I. Sproule, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.085313 66, 085313 (2002).
8. R. Hey, Y.-J. Han, M. Giehler, M. Ramsteiner, H. T. Grahn, and K. H. Ploog, J. Cryst. Growth JCRGAE 0022-0248 278, 219 (2005).
9. J. F. Geisz and D. J. Friedman, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/17/8/305 17, 769 (2002).
10. R. Mouillet, L.-A. de Vaulchier, E. Deleporte, Y. Guldner, L. Travers, and J.-C. Harmand, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(03) 00140-6 126, 333 (2003).
11. A. Hashimoto, T. Yamaguchi, T. Suzuki, and A. Yamamoto, J. Cryst. Growth JCRGAE 0022-0248 278, 532 (2005).
12. G. Mussler, L. Däweritz, K. H. Ploog, J. W. Tomm, and V. Talalaev, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1602576 83, 1343 (2003).
13. D. Gershoni, C. H. Henry, and G. A. Baraff, IEEE J. Quantum Electron. IEJQA7 0018-9197 10.1109/3.247701 29, 2433 (1993).
14. G. B. Morrison, S. C. Woodworth, H. Wang, and D. T. Cassidy, IEEE J. Quantum Electron. IEJQA7 0018-9197 40, 222 (2004).
15. M. Giehler and E. Jahne, Phys. Status Solidi B PSSBBD 0370-1972 73, 503 (1976).
16. B. F. Levine, K. K. Choi, C. G. Bethea, J. Walker, and R. J. Malik, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.97928 50, 1092 (1987).
17. Z. Ikonić, V. Milanović, and D. Tjapkin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.100979 54, 247 (1989).