메뉴 건너뛰기




Volumn 36, Issue 3-6, 2005, Pages 506-509

Epitaxial growth of non-cubic silicon

Author keywords

Molecular beam epitaxy; Silicon; Superlattice; Twinning

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NUCLEATION; SUPERLATTICES; TWINNING;

EID: 33644544080     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.02.064     Document Type: Conference Paper
Times cited : (3)

References (23)
  • 1
    • 0001274901 scopus 로고
    • Electronic structures of hetero-crystalline semiconductor superlattices
    • M. Murayama, and T. Nakayama Electronic structures of hetero-crystalline semiconductor superlattices J. Phys. Soc. Jpn. 61 1992 2419 2433
    • (1992) J. Phys. Soc. Jpn. , vol.61 , pp. 2419-2433
    • Murayama, M.1    Nakayama, T.2
  • 2
    • 0000686887 scopus 로고
    • Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces
    • M. Murayama, and T. Nakayama Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces Phys. Rev. B 49 1994 4710 4724
    • (1994) Phys. Rev. B , vol.49 , pp. 4710-4724
    • Murayama, M.1    Nakayama, T.2
  • 3
    • 35949006090 scopus 로고
    • Zinc-blende-wurtzite polytypism in semiconductors
    • Ch.-Y. Yeh, Z.W. Lu, S. Froyen, and A. Zunger Zinc-blende-wurtzite polytypism in semiconductors Phys. Rev. B 46 1992 10086 10097
    • (1992) Phys. Rev. B , vol.46 , pp. 10086-10097
    • Yeh, Ch.-Y.1    Lu, Z.W.2    Froyen, S.3    Zunger, A.4
  • 4
    • 0000065915 scopus 로고
    • Heterocrystalline structures: New types of superlattices?
    • F. Bechstedt, and P. Käckell Heterocrystalline structures: new types of superlattices? Phys. Rev. Lett. 75 1995 2180 2183
    • (1995) Phys. Rev. Lett. , vol.75 , pp. 2180-2183
    • Bechstedt, F.1    Käckell, P.2
  • 5
    • 0001500886 scopus 로고    scopus 로고
    • Electronic structures and band offsets of heterocrystalline superlattice
    • S.-H. Ke, J. Zi, K.-M. Zhang, and X.-D. Xie Electronic structures and band offsets of heterocrystalline superlattice Phys. Rev. B 54 1996 8789 8793
    • (1996) Phys. Rev. B , vol.54 , pp. 8789-8793
    • Ke, S.-H.1    Zi, J.2    Zhang, K.-M.3    Xie, X.-D.4
  • 6
    • 0038402418 scopus 로고    scopus 로고
    • Artificially layered heteropolytypic structures based on SiC polytypes: Molecular beam epitaxy, characterization and properties
    • A. Fissel Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties Phys. Rep. 379 2003 149 255
    • (2003) Phys. Rep. , vol.379 , pp. 149-255
    • Fissel, A.1
  • 7
    • 0004319280 scopus 로고    scopus 로고
    • Electronic band structure in hexagonal close-packed Si polytypes
    • C. Persson, and E. Janzen Electronic band structure in hexagonal close-packed Si polytypes J. Phys. Condens. Matter 10 1998 10549 10555
    • (1998) J. Phys. Condens. Matter , vol.10 , pp. 10549-10555
    • Persson, C.1    Janzen, E.2
  • 8
    • 0037104205 scopus 로고    scopus 로고
    • Properties of hexagonal polytypes of group-IV elements from first-principles calculations
    • C. Raffy, J. Furthmüller, and F. Bechstedt Properties of hexagonal polytypes of group-IV elements from first-principles calculations Phys. Rev. B 66 2002 075201/1 075201/10
    • (2002) Phys. Rev. B , vol.66
    • Raffy, C.1    Furthmüller, J.2    Bechstedt, F.3
  • 9
    • 0037414237 scopus 로고    scopus 로고
    • First-principle study on the lonsdaleite phases of C, Si and Ge
    • S.Q. Wang, and H.Q. Ye First-principle study on the lonsdaleite phases of C, Si and Ge J. Phys. Condens. Matter 15 2003 L197 L202
    • (2003) J. Phys. Condens. Matter , vol.15
    • Wang, S.Q.1    Ye, H.Q.2
  • 10
  • 11
    • 0000144195 scopus 로고    scopus 로고
    • Phase transformation of silicon caused by contact loading
    • A. Kailer, Y.G. Gogotsi, and K.G. Nickel Phase transformation of silicon caused by contact loading J. Appl. Phys. 81 1997 3057 3063
    • (1997) J. Appl. Phys. , vol.81 , pp. 3057-3063
    • Kailer, A.1    Gogotsi, Y.G.2    Nickel, K.G.3
  • 12
    • 0015431573 scopus 로고
    • Electron-microscope investigation of microplastic deformation mechanisms of silicon by indentation
    • V.G. Eremenko, and V.I. Nikitenko Electron-microscope investigation of microplastic deformation mechanisms of silicon by indentation Phys. Status Solidi A 14 1972 317 330
    • (1972) Phys. Status Solidi A , vol.14 , pp. 317-330
    • Eremenko, V.G.1    Nikitenko, V.I.2
  • 13
    • 0001151299 scopus 로고    scopus 로고
    • Stable hexagonal-wurtzite silicon phase by laser ablation
    • Y. Zhang, Z. Iqbal, S. Vijayalakshmi, and H. Grebel Stable hexagonal-wurtzite silicon phase by laser ablation Appl. Phys. Lett. 75 1999 2758 2761
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 2758-2761
    • Zhang, Y.1    Iqbal, Z.2    Vijayalakshmi, S.3    Grebel, H.4
  • 14
    • 0030211470 scopus 로고    scopus 로고
    • Hexagonal silicon formation by pulsed laser beam annealing
    • J.H. Kim, and J.Y. Lee Hexagonal silicon formation by pulsed laser beam annealing Mater. Lett. 27 1996 275 279
    • (1996) Mater. Lett. , vol.27 , pp. 275-279
    • Kim, J.H.1    Lee, J.Y.2
  • 15
    • 0038537814 scopus 로고    scopus 로고
    • Stacking faults in group-IV crystals: An ab initio study
    • P. Käckell, J. Furthmüller, and F. Bechstedt Stacking faults in group-IV crystals: an ab initio study Phys. Rev. B 58 1998 1326 1330
    • (1998) Phys. Rev. B , vol.58 , pp. 1326-1330
    • Käckell, P.1    Furthmüller, J.2    Bechstedt, F.3
  • 17
    • 0032167144 scopus 로고    scopus 로고
    • Formation of twinned two-bilayer-high islands during initial stages of Si growth on Si(111)√3×√3-B
    • H. Hibino, and T. Ogino Formation of twinned two-bilayer-high islands during initial stages of Si growth on Si(111)√3×√3-B Surf. Sci. 412/413 1998 132 140
    • (1998) Surf. Sci. , vol.412-413 , pp. 132-140
    • Hibino, H.1    Ogino, T.2
  • 18
    • 0001416754 scopus 로고    scopus 로고
    • Twinned epitaxial layers formed on Si(111)√3×√3-B
    • H. Hibino, K. Sumimoto, and T. Ogino Twinned epitaxial layers formed on Si(111)√3×√3-B J. Vac. Sci. Technol. A 16 1998 1934 1937
    • (1998) J. Vac. Sci. Technol. A , vol.16 , pp. 1934-1937
    • Hibino, H.1    Sumimoto, K.2    Ogino, T.3
  • 20
    • 0028194228 scopus 로고
    • Lateral inhomogeneous boron segregation during silicon thin film growth molecular beam epitaxy
    • D. Krüger, G. Lippert, R. Kurps, and H.J. Osten Lateral inhomogeneous boron segregation during silicon thin film growth molecular beam epitaxy J. Cryst. Growth 135 1994 246 252
    • (1994) J. Cryst. Growth , vol.135 , pp. 246-252
    • Krüger, D.1    Lippert, G.2    Kurps, R.3    Osten, H.J.4
  • 21
    • 0000602131 scopus 로고
    • Raman spectrum of wurtzite silicon
    • R.J. Kobliska, and S.A. Solin Raman spectrum of wurtzite silicon Phys. Rev. B 8 1973 3799 3802
    • (1973) Phys. Rev. B , vol.8 , pp. 3799-3802
    • Kobliska, R.J.1    Solin, S.A.2
  • 22
    • 0041806083 scopus 로고
    • Electronic properties of twin-boudaries and twinning superlattices in diamond-type and zinc-blende-type semiconductors
    • Z. Ikonic, G.P. Srivastava, and J.C. Inkson Electronic properties of twin-boudaries and twinning superlattices in diamond-type and zinc-blende-type semiconductors Phys. Rev. B 48 1993 17181 17193
    • (1993) Phys. Rev. B , vol.48 , pp. 17181-17193
    • Ikonic, Z.1    Srivastava, G.P.2    Inkson, J.C.3
  • 23
    • 0041353476 scopus 로고    scopus 로고
    • EBIC study on the electrical activity of stacking faults in silicon
    • T. Sekiguchi, B. Shen, T. Watanabe, and K. Sumino EBIC study on the electrical activity of stacking faults in silicon Mater. Sci. Eng. B 42 1996 235 239
    • (1996) Mater. Sci. Eng. B , vol.42 , pp. 235-239
    • Sekiguchi, T.1    Shen, B.2    Watanabe, T.3    Sumino, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.