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Volumn 42, Issue 1-3, 1996, Pages 235-239

EBIC study on the electrical activity of stacking faults in silicon

Author keywords

Cz Si; EBIC contrast; Electron beam induced current; Stacking faults

Indexed keywords

CHARGE CARRIERS; CRYSTAL GROWTH FROM MELT; ELECTRIC PROPERTIES; ELECTRON BEAMS; INDUCED CURRENTS; OXYGEN; PRECIPITATION (CHEMICAL); STACKING FAULTS; THERMAL EFFECTS;

EID: 0041353476     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01713-8     Document Type: Article
Times cited : (15)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.