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Volumn 42, Issue 1-3, 1996, Pages 235-239
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EBIC study on the electrical activity of stacking faults in silicon
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Author keywords
Cz Si; EBIC contrast; Electron beam induced current; Stacking faults
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Indexed keywords
CHARGE CARRIERS;
CRYSTAL GROWTH FROM MELT;
ELECTRIC PROPERTIES;
ELECTRON BEAMS;
INDUCED CURRENTS;
OXYGEN;
PRECIPITATION (CHEMICAL);
STACKING FAULTS;
THERMAL EFFECTS;
ELECTRON BEAM INDUCED CURRENT (EBIC) TECHNIQUE;
FRANK PARTIAL DISLOCATIONS;
SEMICONDUCTING SILICON;
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EID: 0041353476
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(96)01713-8 Document Type: Article |
Times cited : (15)
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References (13)
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