Thermal quenching of the self-activated band of ZnSe:Cl thin films grown by molecular beam epitaxy

Microelectronics Journal

Volumn 36, Issue 3-6, 2005, Pages 527-530

  Martinez Canton A E ^a,b   Garcia Rocha M ^a   Hernandez Calderon I ^a   Ortega Martinez R ^b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b Universidad Nacional Autónoma de México   (Mexico)

Author keywords

II VI Semiconductors; N doping; Photoluminescence; Self activated band; ZnSe

Indexed keywords

BAND STRUCTURE; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUENCHING;

II-VI SEMICONDUCTORS; N-DOPING; SELF-ACTIVATED BAND; ZNSE;

THIN FILMS;

EID: 33644525300     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.02.118     Document Type: Conference Paper

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