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Volumn 241, Issue 3, 2004, Pages 558-563

Growth and characterization of ultra-thin quantum wells of II-VI semiconductors for optoelectronic applications

Author keywords

[No Author keywords available]

Indexed keywords


EID: 4744360995     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200304301     Document Type: Conference Paper
Times cited : (28)

References (27)
  • 10
    • 4744366760 scopus 로고    scopus 로고
    • note
    • In this work we will make no distinction between the terms atomic layer epitaxy (ALE) and migration enhanced epitaxy (MEE) that are indistinctly employed in the literature.
  • 27
    • 4744346437 scopus 로고    scopus 로고
    • P. Díaz-Arencibia, I. Hernández-Calderón, and M. García-Rocha, to be published
    • P. Díaz-Arencibia, I. Hernández-Calderón, and M. García-Rocha, to be published.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.