Lateral IBIC analysis of GaAs Schottky diodes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 231, Issue 1-4, 2005, Pages 513-517

  Vittone, E ^a   Olivero, P ^a,d   Nava, F ^b   Manfredotti, C ^a   Lo Giudice, A ^a   Fizzotti, F ^a   Egeni, G ^c  

^a UNIVERSITY OF TURIN   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c LABORATORI NAZIONALI DI LEGNARO   (Italy)

^d UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

GaAs Schottky diodes; Ion beam induced charge collection; Ramo's theorem

Indexed keywords

GAAS SCHOTTKY DIODES; ION BEAM INDUCED CHARGE COLLECTION; OPTICAL BEAM INDUCED CURRENTS (OBIC); RAMO'S THEOREM;

ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ION BEAMS; SEMICONDUCTING GALLIUM ARSENIDE; THEOREM PROVING;

SCHOTTKY BARRIER DIODES;

EID: 33644524384     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.01.109     Document Type: Conference Paper

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