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Volumn 395, Issue 3, 1997, Pages 349-354

A study of the trap influence on the performance of semi-insulating gaas detectors

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; IONIZATION OF SOLIDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR COUNTERS;

EID: 0031211230     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00604-9     Document Type: Article
Times cited : (12)

References (20)
  • 4
    • 0009993759 scopus 로고    scopus 로고
    • P.G. Pelfer, J. Ludwig, K. Runge, H.S. Rupprecht (eds.), World Scientific, Singapore
    • A. Cola, in: Gallium Arsenide and Related Compounds P.G. Pelfer, J. Ludwig, K. Runge, H.S. Rupprecht (eds.), World Scientific, Singapore (1996), p. 217; S. Miniato (ed.), Proc. of 3rd Int. Workshop on Gallium Arsenide and Related Compounds, Tuscany, Italy, 22-25 May, 1995.
    • (1996) Gallium Arsenide and Related Compounds , pp. 217
    • Cola, A.1
  • 5
    • 30244542859 scopus 로고
    • Tuscany, Italy, May
    • A. Cola, in: Gallium Arsenide and Related Compounds P.G. Pelfer, J. Ludwig, K. Runge, H.S. Rupprecht (eds.), World Scientific, Singapore (1996), p. 217; S. Miniato (ed.), Proc. of 3rd Int. Workshop on Gallium Arsenide and Related Compounds, Tuscany, Italy, 22-25 May, 1995.
    • (1995) Proc. of 3rd Int. Workshop on Gallium Arsenide and Related Compounds , pp. 22-25
    • Miniato, S.1
  • 8
    • 0030261670 scopus 로고    scopus 로고
    • 9th int. Workshop on room temperature semiconductor X-ray and y-ray detectors, associated electronics and applications
    • Grenoble, September 1995
    • A. Cola, F. Quaranta, M.A. Ciocci, M.E. Fantacci, presented at 9th Int. Workshop on Room Temperature Semiconductor X-ray and y-ray Detectors, Associated Electronics and Applications, Grenoble, September 1995, Nucl. Instr. and Meth. A 380 (1996) 66.
    • (1996) Nucl. Instr. and Meth. A , vol.380 , pp. 66
    • Cola, A.1    Quaranta, F.2    Ciocci, M.A.3    Fantacci, M.E.4
  • 9
    • 30244535959 scopus 로고    scopus 로고
    • note
    • The hole current can be neglected because SI GaAs is slightly n-type, with an electron concentration at least two order of magnitude greater than hole concentration; moreover, the electron mobility is about one order of magnitude greater than the hole mobility.
  • 15


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.