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Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 24, 2005, Pages

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

(7) Fukata, N a,b Fukuda, S a Sato, S a Ishioka, K a,b Kitajima, M a,b Hishita, T b Murakami, K a

a UNIVERSITY OF TSUKUBA (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33644522767 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.72.245209 Document Type: Article

Times cited : (17)

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