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Volumn 231, Issue 1-4, 2005, Pages 486-490
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Studying of trap levels by the use of focused ion beams
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Author keywords
CdZnTe; IBIC; Temperature; Trapping; TRIBIC
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Indexed keywords
CADMIUM COMPOUNDS;
COMPUTER SIMULATION;
ELECTRIC CURRENTS;
HEATING;
PROTON BEAMS;
SEMICONDUCTOR MATERIALS;
TEMPERATURE;
CDZNTE;
IBIC;
TRAPPING;
TRIBIC;
ION BEAMS;
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EID: 33644510127
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nimb.2005.01.020 Document Type: Conference Paper |
Times cited : (8)
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References (8)
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