P-i-n CdTe 128-pixel detector for gamma-ray imaging fabricated by excimer laser processing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4784, Issue , 2003, Pages 259-268

  Aoki, Toru ^a   Nakamura, Atsushi ^a   Niraula, Madan ^b   Tomita, Yasuhiro ^c   Hatanaka, Yoshinori ^d  

^a SHIZUOKA UNIVERSITY   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^c Hamamatu Phoronics KK   (Japan)

^d AICHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

CdTe; Excimer laser; Gamma ray; Imaging detector; Low temperature process

Indexed keywords

CADMIUM TELLURIDE; CRYSTAL STRUCTURE; DIODES; DOPING (ADDITIVES); ELECTRODES; EXCIMER LASERS; FABRICATION; GAMMA RAYS; II-VI SEMICONDUCTORS; LEAKAGE CURRENTS; METAL DETECTORS; PIXELS; PRINTED CIRCUIT BOARDS; SINGLE CRYSTALS; SPECTRUM ANALYZERS; TEMPERATURE; X RAY DETECTORS; X RAYS;

CDTE; EXCIMER LASER PROCESSING; GAMMA RAY IMAGING DETECTORS; HIGH-ENERGY RESOLUTION; IMAGING DETECTOR; LOW- TEMPERATURE PROCESS; ROOM-TEMPERATURE OPERATION; SINGLE-CRYSTAL CDTE WAFERS;

PHOSPHORUS COMPOUNDS;

EID: 3342993132     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.455777     Document Type: Conference Paper

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