Initial stages of MBE growth and formation of CaF 2 /Si(0 0 1) high-temperature interface

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 480-486

  Sokolov, N S ^a,b   Suturin, S M ^a   Ulin, V P ^a   Pasquali, L ^b   Selvaggi, G ^b   Nannarone, S ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

Epitaxial; High temperature interface; MBE

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALCIUM COMPOUNDS; DEPOSITION; ELECTRON DIFFRACTION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MONOLAYERS; NUCLEATION; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; SYNCHROTRON RADIATION;

CALCIUM FLUORIDES; HIGH TEMPERATURE INTERFACES; ULTRAVIOLET PHOTOEMISSIONS;

INTERFACES (MATERIALS);

EID: 3342940073     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.034     Document Type: Conference Paper

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