Quasi-one-dimensional CaF2 islands formed on Si(001) by molecular beam epitaxy

Applied Physics Letters

Volumn 68, Issue 17, 1996, Pages 2363-2365

  Loretto, D ^a   Ross, F M ^a   Lucas, C A ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001270376     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115859     Document Type: Article

References (18)

1. J. A. Venables, G. D. T. Spiller, and M. A. Hanbücken, Rep. Prog. Phys. INS 47, 399 (1984).
2. E. Hahn E. Kampshoff, A. Fricke, J. P. Bucher, and K. Kern, Surf. Sci. INS 319, 277 (1994).
3. Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett. AIP 65, 1020 (1990).
4. J. Tersoff and R. M. Tromp, Phys. Rev. Lett. AIP 70, 2782 (1993).
5. L. J. Schowalter and R. W. Fathauer, Crit. Rev. Solid State Mater. Sci. INS 15, 367 (1989).
6. A. N. Kiselev, A. A. Velichko, and I. A. Okomelchenko, J. Crystal Growth INS 129, 163 (1993).
7. L. K. Howard and A. K. M. M. Haque, Semicond. Sci. Technol. INS 7, 1316 (1992).
8. A. R. Srivasta, J. Narayan, F. Radpour, and R. Singh, J. Vac. Sci. Technol. A AIP 7, 3200 (1989).
9. C. A. Lucas, D. Loretto, and G. C. L. Wong, Phys. Rev. B AIP 50, 14340 (1994).
10. A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. INS 133, 666 (1986).
11. G. C. L. Wong, C. A. Lucas, D. Loretto, A. P. Payne, and P. H. Fuoss, Phys. Rev. Lett. AIP 73, 991 (1994).
12. R. Mamy, B. Carricaburu, A. Munoz-Yague, and C. Fontaine, Surf. Sci. INS 222, 119 (1989).
13. Growth at 700°C resulted in <1% 001 orientation, though the fraction increased at lower growth temperature.
14. D. J. Eaglesham, H. J. Gossman, and M. Cerullo, Phys. Rev. Lett. AIP 65, 1227 (1990).
15. M. H. Loretto, Electron Beam Analysis of Materials (Chapman and Hall, London, 1994).
16. H. J. W. Zandvliet and H. B. Elswijk, Mod. Phys. Lett. B 7, 1547 (1993).
17. S. M. Yalisove and O. Karpenko (private communication).
18. T. C. Shen, C. Wang, J. W. Lyding, and J. R. Tucker, Appl. Phys. Lett. AIP 66, 976 (1994).