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Volumn 125, Issue 9, 2003, Pages 459-462

Photoemission study of CaF2 on Si(001)-2×1 during annealing

Author keywords

A. Semiconductors; A. Surfaces and interfaces; E. Synchrotron radiation

Indexed keywords

ANNEALING; DISSOCIATION; INTERFACES (MATERIALS); PHOTOEMISSION; SILICON; SPECTRUM ANALYSIS; SYNCHROTRON RADIATION;

EID: 0037363890     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00895-5     Document Type: Article
Times cited : (10)

References (17)
  • 6
    • 0013154126 scopus 로고
    • Photoemission and inverse photoemission from semiconductor interfaces
    • G.L. Lay, J. Derrien, & N. Boccara. Les Houches, France: Springer
    • Himpsel F.J. Photoemission and inverse photoemission from semiconductor interfaces. Lay G.L., Derrien J., Boccara N. Semiconductor Interfaces: Formation and Properties. 1987;196 Springer, Les Houches, France.
    • (1987) Semiconductor Interfaces: Formation and Properties , pp. 196
    • Himpsel, F.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.