Electronic properties of CaF2 nanodimensional islands on Si(0 0 1): An MDS and UPS study

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 193, Issue 1-4, 2002, Pages 474-479

  Pasquali, L ^a   Suturin, S ^b   Sokolov, N ^b   Selvaggi, G ^a   D'Addato, S ^a   Nannarone, S ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Angle resolved photoemission; CaF2; Metastable deexcitation spectroscopy (MDS); Semiconductor interfaces; Semiconductors

Indexed keywords

DEPOSITION; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; SILICON;

METASTABLE DEEXCITATION SPECTROSCOPY (MDS);

CALCIUM COMPOUNDS;

EID: 0036609257     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)00823-6     Document Type: Article

References (21)

1. 2/Si(1 1 1)