Preparation of room temperature NO 2 gas sensors based on W- and V-modified mesoporous MCM-41 thin films employing surface photovoltage technique

Sensors and Actuators, B: Chemical

Volumn 114, Issue 1, 2006, Pages 109-119

  Yuliarto, Brian ^a,c   Honma, Itaru ^a   Katsumura, Yosuke ^c   Zhou, Haoshen ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Mesoporous MCM 41; NO 2 gas sensor; Surface photovoltage; Transition metal

Indexed keywords

ROOM TEMPERATURE; SURFACE CHARGE; SURFACE PHOTOVOLTAGE;

ELECTRIC CHARGE; ELECTRIC POTENTIAL; MESOPOROUS MATERIALS; NITROGEN OXIDES; SILICA; THIN FILMS; TUNGSTEN; VANADIUM;

CHEMICAL SENSORS;

EID: 33244476015     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2005.04.016     Document Type: Article

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