Effect of tin addition on mesoporous silica thin film and its application for surface photovoltage NO2 gas sensor

Analytical Chemistry

Volumn 76, Issue 22, 2004, Pages 6719-6726

  Yuliarto, Brian ^a,b   Zhou, HaoShen ^a   Yamada, Takeo ^a   Honma, Itaru ^a   Katsumura, Yosuke ^b   Ichihara, Masaki ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; ELECTRIC POTENTIAL; MIM DEVICES; PERMITTIVITY; SEMICONDUCTOR MATERIALS; SPIN COATING; SURFACE ACTIVE AGENTS; THERMAL EFFECTS; THIN FILMS;

MESOPOROUS SILICA; SENSING PERFORMANCE; SURFACE AREA; SURFACE PHOTOVOLTAGE (SPV);

SILICA;

NITROGEN DIOXIDE; SILICATE; TIN;

ADDITION REACTION; ARTICLE; BIOSENSOR; CHEMICAL STRUCTURE; DIELECTRIC CONSTANT; FILM; GAS ANALYSIS; ROOM TEMPERATURE; SEMICONDUCTOR; VOLTAGE CLAMP;

EID: 8644261601     PISSN: 00032700     EISSN: None     Source Type: Journal    
DOI: 10.1021/ac0495642     Document Type: Article

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