Synthesis of a surface photovoltage sensor using self-ordered tin-modified MCM-41 films: Enhanced NO2 gas sensing

ChemPhysChem

Volumn 5, Issue 2, 2004, Pages 261-265

  Yuliarto, Brian ^a,b   Zhou, HaoShen ^a   Yamada, Takeo ^a   Honma, Itaru ^a   Asai, Keisuke ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Nitrogen oxides; Sensors; Surface photovoltage; Thin films; Zeolites

Indexed keywords

GAS DETECTORS; GAS SENSING ELECTRODES; METAL INSULATOR BOUNDARIES; MIS DEVICES; NITROGEN OXIDES; SENSORS; SURFACE PROPERTIES; TIN; ZEOLITES;

HIGH SENSITIVITY; MESOPOROUS MCM-41; METAL INSULATOR SEMICONDUCTOR STRUCTURES; NO2 GAS; NO2 GAS SENSOR; SURFACE PHOTOVOLTAGES;

THIN FILMS;

MCM 41; NITRIC OXIDE; TIN;

ARTICLE; CALCULATION; CHEMICAL STRUCTURE; ELECTRIC POTENTIAL; ELECTRONICS; FILM; GAS ANALYSIS; ROOM TEMPERATURE; SEMICONDUCTOR; SENSOR; STRUCTURE ANALYSIS;

EID: 2442480490     PISSN: 14394235     EISSN: None     Source Type: Journal    
DOI: 10.1002/cphc.200300884     Document Type: Article

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