Drift mobility and mobility-lifetime products in CdTe:Cl grown by the travelling heater method

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 3074-3078

  Sellin, P J ^a   Dazvies, A W ^a   Lohstroh, A ^a   Ozsan M E ^a   Parkin, J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Cadmium telliiride; Charge transport; Time of flight

Indexed keywords

CHARGE TRANSFER; CHLORINE; ELECTRON TRANSPORT PROPERTIES; HOLE MOBILITY; IMAGING SYSTEMS; INSULATING MATERIALS;

DRIFT MOBILITY; MOBILITY-LIFETIME PRODUCTS; ROOM TEMPERATURE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 33144489567     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.855641     Document Type: Conference Paper

References (14)

1. T. E. Schlesinger and R. B. James, Semiconductors for Room Temperature Nuclear Detector Applications. San Diego, CA: Academic, 1995, vol. 43.
2. P. J. Sellin, A. Lohstroh, A. Simon, and M. B. Breese, "Digital IBIC-new spectroscopic modalities for ion-beam-induced charge imaging," Nucl. Instrum. Methods Phys. Res. A, vol. 521, pp. 600-607, 2004.
3. K. R. Zanio, W. M. Akutagawa, and R. Kikuchi, "Transient currents in semi-insulating CdTe characteristic of deep traps," J. Appl. Phys., vol. 39, pp. 2818-2828, 1968.
4. Y. Eisen, A. Shor, and I. Mardor, "CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems," Nucl. Instrum. Methods Phys. Res. A, vol. 428, pp. 158-170, 1999.
5. K. Suzuki and A. Tanaka, "Evolution of transport properties along a semi-insulating CdTe crystal grown by vertical gradient freeze method," Jpn. J. Appl. Phys., vol. 31, pp. 2479-2482, 1992.
6. K. Suzuki, S. Seto, T. Sawada, and K. Imai, "Carrier Transport Properties of HPB CdZnTe and THM CdTe:Cl," IEEE Trans. Nucl. Sci., vol. 49, no. 3, pp. 1287-1291, Jun. 2002.
7. Z. Burshtein, H. N. Jayatirtha, A. Burger, and J. F. Butler, "Charge-carrier mobilities in CdZnTe single crystals used as nuclear radiation detectors," Appl. Phys. Lett., vol. 63, pp. 102-104, 1993.
8. J. C. Erickson, H. W. Yao, R. B. James, H. Hermon, and M. Greaves, "Time of flight experimental studies of CdZnTe radiation detectors," J. Electron. Mater., vol. 29, pp. 699-703, 2000.
9. K. Suzuki, A. Iwata, S. Seto, T. Sawada, and K. Jmai, "Drift mobility measurements on undoped Cd0.9Zn0.1Te grown by high-pressure Bridgman technique," J. Crystal Growth, vol. 214-215, pp. 909-912, 2000.
10. C. Szeles, S. E. Cameron, S. A. Soldner, J. O. Ndap, and M. D. Reed, "Development of the high-pressure electro-dynamic gradient crystal-growth technology for semi-insulating CdZnTe growth for radiation detector applications," J. Electron. Mater., vol. 33, pp. 742-751, 2004.
11. A. Lohstroh, P. J. Sellin, and A. Simon, "High-resolution mapping of the mobility-lifetime product in CdZnTe using a nuclear microprobe," J. Phys. Conden. Matter, vol. 16, pp. S67-S74, 2004.
12. M. Amman, J. S. Lee, and P. N. Luke, "Electron trapping nonuniformity in high-pressure-Bridgman-grown CdZnTe," J. Appl. Phys., vol. 92, pp. 3198-3206, 2002.
13. K. Chattopadhyay, S. Feth, H. Chen, A. Burger, and C. H. Su, "Characterization of semi-insulating CdTe crystals grown by horizontal seeded physical vapor transport," J. Crystal Growth, vol. 191, pp. 377-385, 1998.
14. A. W. Davies, A. Lohstroh, M. E. Ozsan, and P. J. Sellin, "Spatial uniformity of electron charge transport in high resistivity CdTe," Nucl. Instrum. Methods Phys. Res. A, vol. 546, pp. 192-199, 2005.