Effect of gating on the transport properties of a Si4 cluster

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 4, 2006, Pages

  Dai, Z X ^a   Shi, X Q ^a   Zheng, X H ^a   Zeng, Z ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33144475936     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.045411     Document Type: Article

References (35)

1. A. R. Champagne, A. N. Pasupathy, and D. C. Ralph, Nano Lett. NALEFD 1530-6984 10.1021/nl0480619 5, 305 (2005).
2. A. Nitzan and M. A. Ratner, Science SCIEAS 0036-8075 10.1126/science. 1081572 300, 1384 (2003).
3. J. R. Heath and M. A. Ratner, Phys. Today PHTOAD 0031-9228 56, 43 (2003).
4. M. D. Ventra, S. T. Pantelides, and N. D. Lang, Chem. Phys. CMPHC2 0301-0104 10.1016/S0301-0104(02)00530-X 281, 189 (2002).
5. J. Taylor, H. Guo, and J. Wang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.63.121104 63, 121104 (R) (2001).
6. Y. Liu, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.193409 68, 193409 (2003).
7. J. H. Schön, H. Meng, and Z. N. Bao, Science SCIEAS 0036-8075 10.1126/SCIENCE.1066171 294, 2138 (2001).
8. C. Roland, V. Meunier, B. Larade, and H. Guo, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.035332 66, 035332 (2002).
9. Z. X. Dai, X. H. Zheng, X. Q. Shi, and Z. Zeng, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.72.205408 72, 205408 (2005).
10. R. Kishi, S. Iwata, A. Nakajima, and K. Kaya, J. Chem. Phys. JCPSA6 0021-9606 10.1063/1.474661 107, 3056 (1997).
11. W. Kohn and L. J. Sham, Phys. Rev. PRVAAH 0096-8250 10.1103/PhysRev.140. A1133 140, 1133 (1965).
12. A.-P. Jauho, N. S. Wingreen, and Y. Meir, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.50.5528 50, 5528 (1994).
13. H. Haug and A.-P. Jauho, Quantum Kinetics in Transport and Optics of Semiconductors (Springer-Verlag, Berlin, 1996).
14. J. M. Soler, E. Artacho, J. D. Gale, A. Garcia, J. Junquera, P. Ordejón, and D. S. Portal, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/14/11/302 14, 2745 (2002).
15. B. Larade, J. Taylor, Q. R. Zheng, H. Mehrez, P. Pomorski, and H. Guo, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.64.195402 64, 195402 (2001).
16. Atomistix, A/S, http://www.atomistix.com, TranSIESTA-C Manual: Tutorial and Users Guide.
17. S. Alavi, B. Larade, J. Taylor, H. Guo, and T. Seideman, Chem. Phys. CMPHC2 0301-0104 10.1016/S0301-0104(02)00567-0 281, 293 (2002).
18. M. Büttiker, Y. Imry, R. Landauer, and S. Pinhas, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.31.6207 31, 6207 (1985).
19. M. Brandbyge, M. R. Sørensen, and K. W. Jacobsen, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.56.14956 56, 14956 (1997).
20. M. Brandbyge, J.-L. Mozos, P. Ordejón, J. Taylor, and K. Stokbro, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.165401 65, 165401 (2002).
21. J. Taylor, H. Guo, and J. Wang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.63.245407 63, 245407 (2001).
22. J. Taylor, Ph.D. thesis, McGill University, 2000.
23. J. P. Perdew and A. Zunger, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.23.5048 23, 5048 (1981).
24. E. Artacho, D. Sanchez-Portal, P. Ordejón, A. Garcia, and J. M. Soler, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/(SICI)1521-3951(199909) 215:1<809::AID-PSSB809>3.0.CO;2-0 215, 809 (1999).
25. N. Troullier and J. L. Martins, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.43.1993 43, 1993 (1991).
26. C. Joachim, J. K. Gimzewski, R. R. Schlittler, and C. Chavy, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.74.2102 74, 2102 (1995);
27. J. K. Gimzewski and C. Joachim, Science SCIEAS 0036-8075 10.1126/science.283.5408.1683 283, 1683 (1999);
28. C. Joachim, J. K. Gimzewski, and H. Tang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58.16407 58, 16407 (1998).
29. S. H. Ke, H. U. Baranger, and W. Yang, cond-mat/0402409 (unpublished).
30. X. Q. Shi, X. H. Zheng, Z. X. Dai, Y. Wang, and Z. Zeng, J. Phys. Chem. B JPCBFK 1089-5647 10.1021/jp046349g 109, 3334 (2005).
31. C. Kurdak, D. C. Tsui, S. Parihar, M. B. Santos, H. C. Manoharan, S. A. Lyon, and M. Shaye, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.111065 64, 610 (1994);
32. I. S. Millard, N. K. Patel, E. H. Linfield, P. D. Rose, M. Y. Simmons, D. A. Ritchie, G. A. C. Jones, and M. Pepper, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/11/4/004 11, 483 (1996);
33. K. J. Chen, K. Maezawa, and M. Yamamoto, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.115333 67, 3608 (1995).
34. A. Javey, J. Guo, D. B. Farmer, Q. Wang, E. Yenilmez, R. G. Gordon, M. Lundstrom, and H. J. Dai, Nano Lett. NALEFD 1530-6984 10.1021/nl049222b 4, 1319 (2005).
35. T. Ozel, A. Gaur, J. A. Rogers, and M. Shim, Nano Lett. NALEFD 1530-6984 5, 905 (2005).