SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 11, Issue 4, 1996, Pages 483-488

Negative transconductance in parallel conducting systems controlled by device geometry and magnetic field

(8) Millard, I S a Patel, N K b Linfield, E H a Rose, P D a Simmons, M Y a Ritchie, D A a Jones, G A C a Pepper, M a,b

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b TOSHIBA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE MEASUREMENT; GEOMETRY; MAGNETIC FIELDS; MATHEMATICAL MODELS; PROBES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

FOUR TERMINAL RESISTANCE MEASUREMENT; MOBILITY MODULATION EFFECTS; PARALLEL CONDUCTING SYSTEM; QUANTUM HALL EFFECT; RESISTANCE RESONANCE PHENOMENA; RESONANT TUNNELLING PHENOMENA; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030129552 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/11/4/004 Document Type: Article

Times cited : (4)

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