Dedicated fabrication of silicon-based ensembles of dot molecules with a specific and unique number of dots

Applied Physics Letters

Volumn 88, Issue 6, 2006, Pages

  Hanke, M ^a   Boeck, T ^b   Gerlitzke, A K ^b   Syrowatka, F ^c   Heyroth, F ^c  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c Interdisziplinares Zentrum fur Materialwissenschaften   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON-BASED ENSEMBLES; STRAIN ENERGY DISTRIBUTION; TRIMERS;

DIMERS; EPITAXIAL GROWTH; FINITE ELEMENT METHOD; THERMODYNAMIC PROPERTIES;

SILICON;

EID: 32444450265     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2173216     Document Type: Review

References (11)

1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, NY, 1999).
2. V. A. Shchukin, N. N. Ledentsov, and D. Bimberg, Epitaxy of Nanostructures (Springer, New York, 2004).
3. R. Songmuang, S. Kiravittaya, and O. G. Schmidt, Appl. Phys. Lett. 82, 2892 (2003).
4. J. L. Gray, R. Hull, and J. A. Floro, Appl. Phys. Lett. 81, 2445 (2002).
5. A. Imamoglu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, Phys. Rev. Lett. 83, 4204 (1999).
6. R. J. Warburton, C. Schaflein, D. Haft, F. Bickel, A. Lorke, K. Karrai, J. M. Garcia, W. Schoenfeld, and P. M. Petroff, Nature (London) 405, 926 (2000).
7. P. Michler, A. Kiraz, C. Becher, W. V. Schoenfeld, P. M. Petroff, L. D. Zhang, E. Hu, and A. Imamoglu, Science 290, 2282 (2000).
8. J. L. Gray, S. Atha, R. Hull, and J. A. Floro, Nano Lett. 4, 2447 (2004).
9. M. Hanke, M. Schmidbauer, R. Köhler, F. Syrowatka, A.-K. Gerlitzke, and T. Boeck, Appl. Phys. Lett. 84, 5228 (2004).
10. The solubility of silicon within a bismuth solution of 50 g accounts for 3.074 mg at 1073 K and 0.156 mg at 848 K, respectively.
11. W. Dorsch, H. P. Strunk, H. Wawra, G. Wagner, J. Groenen, and R. Carles, Appl. Phys. Lett. 72, 179 (1998).