Advanced retrograde well technology for 90-nm-node embedded static random access memory using high-energy parallel beam

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2399-2403

  Yamashita, Tomohiro ^a   Kltazawa, Masashi ^a   Kawasaki, Yoji ^a   Takashino, Hiroyuki ^a   Kuroi, Takashi ^a   Inoue, Yasuo ^a   Inuishi, Masahide ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

High energy ion implantation; Parallel beam; Retrograde well; Silicon; System on a chip

Indexed keywords

ION IMPLANTATION; MICROPROCESSOR CHIPS; SEMICONDUCTING SILICON; SILICON WAFERS; THRESHOLD VOLTAGE;

HIGH-ENERGY ION IMPLANTATION; PARALLEL BEAM; RETROGRADE WELLS; SYSTEM ON A CHIP;

RANDOM ACCESS STORAGE;

EID: 32444440042     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2399     Document Type: Article

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