메뉴 건너뛰기




Volumn 12, Issue 4, 1999, Pages 457-461

The effect of deterministic spatial variations in retrograde well implants on shallow trench isolation for sub-0.18 μm CMOS technology

Author keywords

CMOSFET's; Ion implantation; Isolation technology; Retrograde wells

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; PHOTORESISTS;

EID: 0033341316     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.806123     Document Type: Article
Times cited : (13)

References (4)
  • 3
    • 84886448150 scopus 로고    scopus 로고
    • A highly manufacturable corner rounding solution for 0.18 μm shallow trench isolation
    • C. P. Chang et al., "A highly manufacturable corner rounding solution for 0.18 μm shallow trench isolation," IEDM Tech. Dig., p. 661, 1997.
    • (1997) IEDM Tech. Dig. , pp. 661
    • Chang, C.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.