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Volumn 12, Issue 4, 1999, Pages 457-461
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The effect of deterministic spatial variations in retrograde well implants on shallow trench isolation for sub-0.18 μm CMOS technology
a a a a a a |
Author keywords
CMOSFET's; Ion implantation; Isolation technology; Retrograde wells
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Indexed keywords
INTEGRATED CIRCUIT MANUFACTURE;
ION IMPLANTATION;
PHOTORESISTS;
RETROGRADE WELLS;
SHALLOW TRENCH ISOLATION (STI);
CMOS INTEGRATED CIRCUITS;
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EID: 0033341316
PISSN: 08946507
EISSN: None
Source Type: Journal
DOI: 10.1109/66.806123 Document Type: Article |
Times cited : (13)
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References (4)
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