Current-density patterns induced by avalanche injection phenomena in high-voltage diodes during turn-off

Annalen der Physik (Leipzig)

Volumn 13, Issue 7-8, 2004, Pages 414-422

  Niedernostheide, F J ^a   Falck, E ^a   Schulze, H J ^a   Kellner Werdehausen, U ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b Eupec GmbH   (Germany)

Author keywords

Current filaments; Dynamic avalanche; Power semiconductor devices; Self organization

Indexed keywords

AVALANCHE DIODES; CHARGE CARRIERS; CURRENT DENSITY; ELECTRIC SPACE CHARGE; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR JUNCTIONS;

CURRENT DENSITY PATTERNS; CURRENT FILAMENTS; DYNAMIC AVALANCHE; POWER SEMICONDUCTOR DEVICES;

SEMICONDUCTOR SWITCHES;

EID: 3242791629     PISSN: 00033804     EISSN: None     Source Type: Journal    
DOI: 10.1002/andp.200410084     Document Type: Article

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