Stable dynamic avalanche in Si power diodes

Applied Physics Letters

Volumn 74, Issue 21, 1999, Pages 3170-3172

  Domeij, Martin ^a   Breitholtz, Bo ^a,c   Östling, Mikael ^a   Lutz, Josef ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Semikron Elektronik GmbH AndCo KG   (Germany)

^c ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENT CONTROL; HETEROJUNCTIONS; IONIZATION OF SOLIDS; SEMICONDUCTING SILICON; SUBSTRATES;

NEGATIVE DIFFERENTIAL RESISTANCE (NDR); STABLE DYNAMIC AVALANCHE;

AVALANCHE DIODES;

EID: 0032620271     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124097     Document Type: Article

References (9)

1. A. Porst, in Proceedings of the 6th International Symposium on Power Semiconductor Devices and ICs, Davos, Switzerland, 163 (IEEE, Piscataway, NJ, 1994).
2. Y. Tomomatsu, E. Suekawa, T. Enjyoji, M. Takeda, H. Kondoh, H. Hagino, and T. Yamada, in Proceedings of the 8th International Symposium on Power Semiconductor Devices and ICs, Maui, Hawaii, 353 (IEEE, Piscataway, NJ, 1996).
3. M. Domeij, B. Breitholtz, J. Linnros, L. Hillkirk, and M. Östling, IEEE Trans. Electron Devices 46, 781 (1999).
4. J. Lutz, in Proceedings of the 7th European Conference on Power Electronics and Applications, Trondheim, 1.502 (EPE Association, Brussels, Belgium, 1997).
5. K. Matsushita, T. Shinohe, M. Tsukuda, Y. Minami, J. Miwa, S. Yaganisawa, and H. Ohashi, in Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs, Tokyo, 191 (IEEE, Piscataway, NJ, 1998).
6. TMA, Medici Users Manual (Technology Modeling Associates, Sunnyvale, CA, 1997).
7. E. Scholl, Nonequilibrium Phase Transitions in Semiconductors (Springer, Berlin, Germany, 1987).
8. G. Fratelli and G. F. Vitale, Solid-State Electron. 37, 275 (1994).
9. M. M. Shahidul Hassan and H. Domingos, Solid-State Electron. 33, 1217 (1990).