UV-specific (320-365 nm) digital camera based on a 128×128 Focal plane array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue , 2000, Pages

  Brown, J D ^a   Boney, J ^a   Matthews, J ^a   Srinivasan, P ^a   Schetzina, J F ^a   Nohava, Thomas ^b   Yang, Wei ^b   Krishnankutty, Subash ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; DRY ETCHING; ELECTRIC CONTACTS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; METALLIZING; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS;

DIGITAL CAMERAS; FOCAL PLANE ARRAYS; LEADLESS CHIP CARRIERS (LCC); READOUT INTEGRTED CIRCUITS (ROIC);

PHOTODIODES;

EID: 3242772124     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000065     Document Type: Article

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