Photoluminescence study of silicon-doped GaN grown by MBE on GaAs substrates

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 219-222

  Orton, J W ^a   Lacklison, D E ^a   Andrianov, A V ^a,b   Cheng, T S ^a   Dewsnip, D J ^a   Foxon, C T ^a   Jenkins, L C ^a   Hooper, S E ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

BAND EDGE EMISSION; NEUTRAL ACCEPTORS; NEUTRAL DONORS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031077340     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00170-0     Document Type: Article

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