Temperature stability of permittivity and dielectric relaxation in multllayered thin films of (Ba0.80Sr0.20)(T 1-xZrx)O3 with a compositionally graded layer

Applied Physics Letters

Volumn 84, Issue 26, 2004, Pages 5431-5433

  Cheng, B L ^a   Wang, Can ^a   Wang, S Y ^a   Button, T W ^b   Lu, H B ^a   Zhou, Y L ^a   Chen, Z H ^a   Yang, G Z ^a  

^a INSTITUTE OF PHYSICS   (China)

^b UNIVERSITY OF BIRMINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CAPACITORS; DIELECTRIC RELAXATION; DOPING (ADDITIVES); PERMITTIVITY; PHASE TRANSITIONS; PULSED LASER DEPOSITION; RELAXATION PROCESSES; RESIDUAL STRESSES; X RAY DIFFRACTION;

COMPOSITIONAL GRADED LAYERS (CGL); FULL WIDTH AT HALF MAXIMUM (FWHM); RELAXATION FREQUENCY; RELAXATION STRENGTH;

THIN FILMS;

EID: 3242702460     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767605     Document Type: Article

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