Thermoelectric properties of electrically conductive III-oxynitrides of Al1-xInxOsNt and InOsNt prepared by radio-frequency reactive sputtering: Toward a thermopower device

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 12 A, 2002, Pages

  Yamaguchi, Shigeo ^a,b   Iwamura, Yasuo ^a,b   Yamamoto, Atsushi ^b  

^a KANAGAWA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

AlInON; InON; Nitride; Oxynitride; Power factor; Seebeck coefficient; Thermopower

Indexed keywords

ELECTRIC CONDUCTIVITY; SEEBECK EFFECT; SPUTTERING; THERMAL CONDUCTIVITY;

FIGURE OF MERIT; OXYNITRIDE; POWER FACTOR; RADIO-FREQUENCY REACTIVE SPUTTERING; THERMOPOWER DEVICE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036976015     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1354     Document Type: Letter

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