Properties of ZnO-doped Zr0.8Sn0.2TiO4 thin films by rf sputtering

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 2, 2003, Pages 670-676

  Huang, Cheng Liang ^a   Hsu, Cheng Shing ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; DOPING (ADDITIVES); GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; MICROSTRUCTURE; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM COMPOUNDS;

POLYCRYSTALLINE MICROSTRUCTURE;

THIN FILMS;

EID: 0037274038     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

1. Y. C. Heiao, L. Wu, and C. C. Wei, Mater. Res. Bull. 23, 1687 (1988).
2. S. I. Hirano, T. Hayashi, and A. Hattori, J. Am. Ceram. Soc. 74, 1320 (1991).
3. H. Tamura, J. Hattori, T. Nishikawa, and K. Wakino, Jpn. J. Appl. Phys., Part 1 28, 2528 (1989).
4. A. E. Mchale and R. S. Roth, J. Am. Ceram. Soc. 69, 827 (1986).
5. R. E. Newnham, J. Am. Ceram. Soc. 55, 409 (1967).
6. K. Wakino, K. Minai, and H. Tamura, J. Am. Ceram. Soc. 67, 278 (1984).
7. A. E. Mchale and R. S. Roth, J. Am. Ceram. Soc. 66, C18 (1983).
8. H. Ikawa, H. Shimojima, K. Urabe, T. Yamada, and S. Udagawa, Sci. Ceram. 14, 509 (1987).
9. G. Wolfram and H. E. Goebel, Mater. Res. Bull. 16, 1455 (1981).
10. C. L. Huang, C. C. You, C. C. Wei, and B. C. Shen, J. Wave-mater. Interact. 10, 1 (1995).
11. F. J. Wu and T. Y. Tseng, J. Am. Ceram. Soc. 81, 439 (1998).
12. O. Nakagawara, Y. Toyota, M. Kobayashi, Y. Yoshino, and Y. Katayama, J. Appl. Phys. 80, 388 (1996).
13. R. B. van Dover and L. F. Schneemeyer, IEEE Electron Device Lett. 9, 329 (1998).
14. C.-L. Huang and C.-S. Hsu, J. Vac. Sci. Technol. A 18, 2327 (2000).
15. B. A. Movchan and A. V. Demshishin, Phys. Met. Metallogr. 28, 83 (1969).
16. J. A. Thornton, J. Vac. Sci. Technol. A 4, 3059 (1986).
17. S. J. Chae, S. S. Park, and S. G. Yoon, Integr. Ferroelectr. 10, 63 (1995).
18. Y. Fukuda, K. Aoki, K. Numata, and A. Nishimura, Jpn. J. Appl. Phys., Part 1 33, 5255 (1994).