Evolution of tungsten-oxide whiskers synthesized by a rapid thermal-annealing treatment

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1084-1087

  Cho, M H ^a   Park, S A ^b   Yang, K D ^b   Lyo, I W ^b   Jeong, K ^b   Kang, S K ^b   Ko, D H ^b   Kwon, K W ^c   Ku, J H ^c   Choi, S Y ^c   Shin, H J ^d  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Yonsei University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

^d Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; CRYSTALLINE MATERIALS; GROWTH (MATERIALS); LIGHT EMITTING DIODES; NUCLEATION; OXIDATION; PARTIAL PRESSURE; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR LASERS; SPUTTERING; SUPERCONDUCTIVITY; VACUUM; X RAY DIFFRACTION ANALYSIS;

SURFACE MIGRATION; THERMAL ANNEALING; TUNGSTEN OXIDE; WHISKER FORMATION;

TUNGSTEN COMPOUNDS;

EID: 3242661030     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1738670     Document Type: Article

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