Proton and gamma radiation effects in a new first-generation SiGe HBT technology

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 181-190

  Haugerud, Becca M ^a   Pratapgarhwala, Mustansir M ^a   Comeau, Jonathan P ^a   Sutton, Akil K ^a   Prakash, A P Gnana ^a   Cressler, John D ^a   Marshall, Paul W ^b   Marshall, Cheryl J ^b   Ladbury, Ray L ^c   El Diwany, Monir ^d   Mitchell, Courtney ^e   Rockett, Leonard ^e   Bach, Tuyet ^e   Lawrence, Reed ^e   Haddad, Nadim ^e  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

^d NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^e BAE SYSTEMS   (United States)

Author keywords

Circuits; Gamma irradiation; Mismatch; Proton; SiGe HBT

Indexed keywords

ELECTRIC CURRENTS; GAMMA RAYS; HETEROJUNCTION BIPOLAR TRANSISTORS; SILICON COMPOUNDS;

MISMATCH; SIGE HBT;

PROTON IRRADIATION;

EID: 32344434457     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.11.007     Document Type: Article

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