Development of ZnSe-based white light emitting diodes with longer lifetimes of over 10,000 hr

Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)

Volumn 154, Issue 4, 2006, Pages 42-48

  Nakamura, Takao ^a,b  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^b JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

Author keywords

Be chalcogenides; Confinement; LED; Lifetime; Rapid degradation; White; ZnMgBeSe; ZnMgSSe; ZnSe

Indexed keywords

BE CHALCOGENIDES; CONFINEMENT; LIFETIME; RAPID DEGRADATION; WHITE; ZNMGBESE; ZNMGSSE; ZNSE;

CARRIER CONCENTRATION; CLADDING (COATING); RELIABILITY; SEMICONDUCTOR MATERIALS; ZINC COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 32344432903     PISSN: 04247760     EISSN: 15206416     Source Type: Journal    
DOI: 10.1002/eej.20285     Document Type: Article

References (14)

1. Mukai T, Nakamura S. White and UV LEDs. Oyobutsuri 1999;68:152-1S5. (in Japanese)
2. Matsubara H, Nakanishi F, Doi H, Katayama K, Saegusa A, Mitsui T, Takebe T, Nishine S. Develop ment of ZnSe homoepitaxial white LED. SEI Tech Rev 1999:155:93-97.
3. Katayama K, Matsubara H, Nakanishi F, Nakamura T, Doi H, Saegusa A, Mitsui T, Matsuoka T, Irikura M, Takebe T, Nishine S, Shirakawa T. ZnSe-based white LEDs. J Crystal Growth 2000;214/215:1064-1070.
4. Shirakawa T. Effect of defects on the degradation of ZnSe-based white LEDs. Mater Sci Eng B 1999;B91 -92:470-475.
5. Chuang SL, Ishibashi A, Kijima S, Nakayama N, Ukita M, Taniguchi S. Kinetic model for degradation of light-emitting diodes. IEEE J Quantum Electron 1997;33:970-979.
6. Adachi M, Aung ZM, Minami K, Koizumi K, Watanabe M, Kawamoto S, Yamaguchi T, Kasada H, Abe T, Ando K, Ishibashi A, Itoh S. Microscopic defect induced slow-mode degradation in II-VI based bluegreen laser diodes. J Crystal Growth 2000;214/215: 1035-1039.
7. Fujira T. Toray Research Center News 2003;84:31-39. (in Japanese)
8. Waag A, Fischer F, Laugauer H-J, Litz T, Laubender J, Lunz U, Zehnder U, Ossau W, Gerhardt T, Moller M, Landwehr G. Molecular-beam epitaxy of beryllium-chalcogenide-based thin films and quantumwell structure. J Appl Appl Phys 1996;80:792-796.
9. Waag A, Fischer F, Schull K, Baron T, Laugauer H-J, Litz T, Zehnder U, Ossau W, Gerhardt T, Keim M, Reuscher G, Landweht G. Laser diodes based on beryllium-chalcogenides. Appl Phys Lett 1997;70: 280-282.
10. Lugauer HJ, Keim M, Reuscher G, Grabs P, Lunz U, Waag A, Landwehr G, Ivanov D, Shubina T, Toropov A, Il'inskaya N, Kop'ev P, Alferov Z. MBE-grown laser diodes based on beryllium containing II-VI semiconductors. J Crsytal Growth 1999;201/202: 927-932.
11. Sawamura A, Kohyama M, Keishi T. An efficient preconditioning scheme for plane-wave-based electronic structure calculations. Comput Mater Sci 1999; 14:4-8.
12. Cheong B-H, Park CH, Chang KJ. First-principle study of the compensation mechanism for nitrogen accepter in ZnSe. Phys Rev B 1995;51:10610-10614.
13. Katayama K, Nakamura T. Degradation mechanism limiting the lifetime of ZnSe-based white light-emitting diodes. J Appl Phys 2004;95:3576-3581.
14. Nakamura T, Fujiwara S, Mori H, Katayama K. Novel cladding structure of ZnSe-based white LEDs with longer lifetime of over 10,000h. Jpn J Appl Phys 2004;43:1287-1292.