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Volumn 201, Issue , 1999, Pages 927-932
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MBE-grown laser diodes based on beryllium containing II-VI semiconductors
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Author keywords
[No Author keywords available]
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Indexed keywords
BERYLLIUM COMPOUNDS;
ENERGY GAP;
HETEROJUNCTIONS;
LEAKAGE CURRENTS;
MONOLAYERS;
OPTICAL WAVEGUIDES;
PASSIVATION;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR LASERS;
SEMICONDUCTOR SUPERLATTICES;
BERYLLIUM CHALCOGENIDES;
FRACTIONAL MONOLAYERS;
SUPERLATTICE WAVEGUIDES;
MOLECULAR BEAM EPITAXY;
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EID: 0032683602
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)01493-6 Document Type: Article |
Times cited : (9)
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References (9)
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