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Volumn 201, Issue , 1999, Pages 927-932

MBE-grown laser diodes based on beryllium containing II-VI semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM COMPOUNDS; ENERGY GAP; HETEROJUNCTIONS; LEAKAGE CURRENTS; MONOLAYERS; OPTICAL WAVEGUIDES; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SEMICONDUCTOR SUPERLATTICES;

EID: 0032683602     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01493-6     Document Type: Article
Times cited : (9)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.