High-performance and stable organic thin-film transistors based on fused thiophenes

Advanced Functional Materials

Volumn 16, Issue 3, 2006, Pages 426-432

  Sun, Yanming ^a   Ma, Yongqiang ^a   Liu, Yunqi ^a,b   Lin, Yanyong ^a   Wang, Zhenyu ^a   Wang, Ying ^a   Di, Chongan ^a   Xiao, Kai ^a   Chen, Xiaoming ^a,b   Qiu, Wenfeng ^a   Zhang, Bin ^a   Yu, Gui ^a   Hu, Wenping ^a   Zhu, Daoben ^a  

^a INSTITUTE OF CHEMISTRY   (China)

^b SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; OPTICAL PROPERTIES; POLYMERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION ANALYSIS;

POLYMER NANOCOMPOSITES; ROOM TEMPERATURE;

THIN FILM TRANSISTORS;

EID: 32244438504     PISSN: 1616301X     EISSN: None     Source Type: Journal    
DOI: 10.1002/adfm.200500547     Document Type: Article

References (32)

1. O. Horowitz, Adv. Mater. 1998, 10, 365.
2. C. D. Dimitrakopoulos, P. R. L. Malenfant, Adv. Mater. 2002, 14, 99.
3. G. Horowitz, J. Mater. Chem. 1999, 9, 2021.
4. G. H. Gelinck, T. C. T. Geuns, D. M. de Leeuw, Appl. Phys. Lett. 2000, 77, 1487.
5. M. Pope, C. E. Swenberg, in Organic Crystals and Polymers, Oxford University Press, Oxford, UK 1999.
6. C. J. Drury, C. M. J. Mutsaers, C. M. Hart, M. Matters, D. M. de Leeuw, Appl. Phys. Lett. 1998, 73, 108.
7. G. B. Blanchet, Y.-L. Loo, J. A. Rogers, F. Gao, C. R. Fincher, Appl. Phys. Lett. 2003, 82, 463.
8. D. Voss, Nature 2000, 407, 442.
9. Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, T. N. Jackson, IEEE Electron. Device Lett. 1997, 18, 606.
10. H. Klauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, W. Weber, J. Appl. Phys. 2002, 92, 5259.
11. Z. Bao, A. Dodabalapur, A. J. Lovinger, Appl. Phys. Lett. 1996, 69, 4108.
12. G. Horowitz, M. E. Hajlaoui, Adv. Mater. 2000, 12, 1046.
13. D. Fichou, J. Mater. Chem. 2000, 10, 571.
14. F. C. Chen, C. W. Chu, J. He, Y. Yang, Appl. Phys. Lett. 2004, 55, 3295.
15. H. Moon, R. Zeis, E. J. Borkent, C. Besnard, A. J. Lovinger, T. Siegrist, C. Kloc, Z. N. Bao, J. Am. Chem. Soc. 2004, 126, 15 322.
16. T. Graves-Abe, Z. N. Bao, J. C. Sturm, Nano Lett. 2004, 4, 2489.
17. L. P. Ma, Y. Yang, Appl. Phys. Lett. 2004, 55, 5084.
18. H. E. Katz, Chem. Mater. 2004, 16, 4748.
19. M. Halik, H. Klauk, U Zschieschang, G. Schmid, S. Ponomarenko, S. Kirchmeyer, W. Weber, Adv. Mater. 2003, 15, 917.
20. H. Meng, F. Sun, M. B. Goldfinger, G. D. Jaycox, Z. Li, W. J. Marshall, G. S. Blackman, J. Am. Chem. Soc. 2005, 127, 2406.
21. V. C. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R. L. Willett, T. Someya, M. E. Gershenson, J. A. Rogers, Science 2004, 303, 1644.
22. H. Meng, Z. Bao, A. J. Lovinger, B.-C. Wang, A. M. Mujsce, J. Am. Chem. Soc. 2001, 123, 9214.
23. M. Heeney, C. Bailey, K. Genevicius, M. Shkunov, D. Sparrowe, S. Tierney, I. McCulloch, J. Am. Chem. Soc. 2005, 127, 1078.
24. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson, D. G. Schlom, IEEE Electron. Device Lett. 1997, 18, 87.
25. (25] a) F. Ailared, J. Hellberg, T. Remonen, Tetrahedron Lett. 2002, 43, 1553.
26. b) G. F. Pedulli, M. Tiecco, M. Guerra, G. Martelli, P. Zanirato, J. Chem. Soc., Perkin Trans. 2 1978, 212.
27. X. C. Li, H. Sirringhaus, F. Garnier, A. B. Holmes, S. C. Moratti, N. Feeder, W. Clegg, S. J. Teat, R. H. Friend. J. Am. Chem. Soc. 1998, 120, 2206.
28. F. Nuesh, M. Grätzel, Chem. Phys. 1995, 193, 1.
29. A. Facchetti, M. H. Yoon, C. L. Stern, G. R. Hutchison, M. A. Ratner, T. J. Marks, J. Am. Chem. Soc. 2004, 126, 13 480.
30. A. Facchetti, Y. Deng, A. Wang, Y. Koide, H. Sirringhaus, T. J. Marks, R. H. Friend, Angew. Chem. Int. Ed. 2000, 39, 4547.
31. Y. Wu, Y. Li, S. Gardner, B. S. Ong, J. Am. Chem. Soc. 2005, 127, 614.
32. G. M. Sheldrich, SHELXTL program package: SHELXS97 and SHELXL97, University of Göttingen, Germany 1997.