Microstructural characterization of the interface between IZO and Mo/AI/Mo metal line used in TFT-LCDs

Digest of Technical Papers - SID International Symposium

Volumn 36, Issue 1, 2005, Pages 332-335

  Choi, Sunglak ^a   Hwang, Seong Yong ^a   Oh, Weon Sik ^a   Kim, Miyang ^b  

^a SAMSUNG Electronics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYERS; CONTACT RESISTIVITY; DRY ETCHING PROCESS; MO LAYER;

ALUMINUM; ETCHING; INSULATION; INTERFACES (MATERIALS); LIQUID CRYSTAL DISPLAYS; MOLYBDENUM; OXIDATION; PASSIVATION;

THIN FILM TRANSISTORS;

EID: 32144464585     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.2036439     Document Type: Conference Paper

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