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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2576-2583

Molybdenum/pure aluminum gate bus line defect reduction for high-resolution thin film transistor liquid crystal displays

(2) Tsujimura, Takatoshi a,b Makita, Atsuya b

a Intl Display Technology Ltd (Japan)

b IBM JAPAN LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COOLING; CRYSTAL DEFECTS; ELECTRIC INSULATORS; ETCHING; GRAIN SIZE AND SHAPE; HEATING; LIQUID CRYSTAL DISPLAYS; SILICON WAFERS; SPUTTERING; STRESS ANALYSIS; STRUCTURE (COMPOSITION); SUBSTRATES; TENSILE STRESS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT MODE ANALYSIS; VACANCY PINNING;

THIN FILM TRANSISTORS;

EID: 0942300075 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1629713 Document Type: Article

Times cited : (2)

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