The mechanism of improvement of contact resistivity in TFT-LCDs between IZO layers and A1-based metal lines by diffusion of Mo atoms

Current Applied Physics

Volumn 2, Issue 6, 2002, Pages 451-454

  Kim, Hyun Jin ^a   Lee, Ho Nyeon ^a   Park, Jae Chel ^a   Lee, Won Geon ^a  

^a HYDIS   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036891104     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1567-1739(02)00097-4     Document Type: Article

References (4)

1. M.P. Hong, in: SID 2001, New Approaches to Process Simpliflication for Large Area and High Resolution TFT-LCD, p. 1148.
2. H. Takatsuji, E.G. Clogan, Cabral, J.M.E. Harper, IBM. J. Res. Dev. 42 (3-4) (1998) 501.
3. P.M. Fryer et al., in: 1996 Society for Information Display International Symposium, 1996, p. 333.
4. S.K. Saha, R.S. Howell, M.K. Hatalis, J. Electrochem. Soc. 146 (1999) 3139.