High power silicon schottky barrier diodes with different edge termination structures

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 37-41, 2005, Pages

  Liou, Bor Wen ^a   Chen, Tron Min ^b   Chen, Chih Wei ^b   Uang, Kai Ming ^b   Wang, Shui Jinn ^b  

^a WUFENG INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Implantation; LSJ; Polysilicon; RESURF; SBDs; Schottky

Indexed keywords

ION IMPLANTATION; LEAKAGE CURRENTS; POLYSILICON; SURFACE PHENOMENA; THIN FILMS;

IMPLANTATION; LSJ; RESURF; SBDS; SCHOTTKY;

SCHOTTKY BARRIER DIODES;

EID: 32044469870     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1244     Document Type: Article

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