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Solid-State Electronics

Volumn 44, Issue 4, 2000, Pages 631-638

Characteristics of high breakdown voltage Schottky barrier diodes using p+-polycrystalline-silicon diffused-guard-ring

(2) Liou, Bor Wen a Lee, Chung Len b

a Wu Feng Jr Coll Technol C (China)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

CAPACITANCE VOLTAGE CHARACTERISTICS; GUARD RING STRUCTURE; POLYCRYSTALLINE SILICON;

SCHOTTKY BARRIER DIODES;

EID: 0033909135 PISSN: 00381101 EISSN: None Source Type: None
DOI: 10.1016/S0038-1101(99)00258-0 Document Type: Article

Times cited : (15)

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