Effect of doping concentration on the grain boundary trap density and threshold voltage of polycrystalline SOI MOSFETs

Microelectronic Engineering

Volumn 83, Issue 2, 2006, Pages 252-258

  Daniel, R Joseph ^a   Bhat, K N ^a   Bhattacharya, Enakshi ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

Charge sheet model; Effective doping concentration; Grain boundary passivation; Grain boundary trap density; PolySOI MOSFETs

Indexed keywords

ELECTRON TRAPS; EXTRACTION; GRAIN BOUNDARIES; MOSFET DEVICES; POLYCRYSTALLINE MATERIALS; SILICON WAFERS; THIN FILMS; THRESHOLD VOLTAGE;

CHARGE SHEET MODELS; EFFECTIVE DOPING CONCENTRATION; GRAIN BOUNDARY PASSIVATION; GRAIN BOUNDARY TRAP DENSITY; POLYSOI MOSFETS;

SEMICONDUCTOR DOPING;

EID: 32044453563     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.089     Document Type: Article

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